An optimized fitting function with least square approximatio
发布时间：2024-02-04 20:47
An enhanced small-signal model is introduced to model the influence of the impact ionization effect on the performance of In As/Al Sb HFET, in which an optimized fitting function D(ωτi) in the form of least square approximation is proposed in order to further enhance the accuracy in modeling the frequency dependency of the impact ionization effect.The enhanced model with D(ωτi) can accurately characterize the key S parameters of In As/Al Sb HFET in a wide frequency range wi...
【文章页数】：4 页
【文章目录】：
1. Introduction
2. Small-signal modeling
3. Verification
4. Conclusions
本文编号：3895827
【文章页数】：4 页
【文章目录】：
1. Introduction
2. Small-signal modeling
3. Verification
4. Conclusions
本文编号：3895827
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